Dr. Senad Bulja, PhD, FIET, SMIEEE

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Home » Researches » PIN Diode Based Variable Directional Couple

PIN Diode Based Variable Directional Couple

Dr. Senad Bulja 04/01/2023Download PDF

The interest in tuneable radio frequency (RF) passive components has increased in recent years, driven by the need of high integration and cost minimization of the overall transmission system.

Tuneable directional couplers attracted attention in the 1980s driven by the requirement of adaptive power control monitoring. As an example, base station RF front ends require constant power monitoring as a means of control of interference to other users and, also, for adequate measurements of the received power. More specifically, optimum detection accuracy depends on the appropriate amount of sampled RF power coupled into the monitoring circuit. Furthermore, tuneable directional couplers can be used in the design of baluns with tuneable impedance transforming ratios. 

In the design of tuneable couplers for power monitoring purposes, it is essential that the coupling is loose so that the power in the direct port shows little or no variation with the changes in the coupling coefficient. In this way, the amount of coupled power needed for optimum detection can be provided without a significant influence on the power in the direct port. This is different from the requirement imposed on conventional PIN diode-based amplitude modulators. PIN diode amplitude modulators are essentially variable attenuators, and usually require a tight coupling coefficient-normally provided in the form of a 3-dB coupler with PIN diodes placed in the circuit of the reflection loads. 

    Analysis and design of a novel variable directional coupler based on a parallel line directional coupler using the even-odd mode technique are proposed in this paper. In this coupler, the variation of coupling is achieved using a PIN diode, connected to the nominally coupled port of a parallel line directional coupler, while the output is derived from the normally isolated port. To verify the theory a parallel microstrip line coupler is fabricated on a substrate with εr = 3.66, h = 762 μm and tanδ = 0.006 and measured. The measured results show a variation in the transmission coefficient of nearly 20 dB, while at the same time, the change in the direct arm insertion loss is lower than 0.2 dB.

Fig. 1. Schematic of PIN diode based variable power divider (left) and fabricated PIN diode based variable power divider with PIN diode connected to nominally coupled port (right)
Fig. 1. Schematic of PIN diode based variable power divider (left) and fabricated PIN diode based variable power divider with PIN diode connected to nominally coupled port (right)

 

               

 

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Profile & Bio

Senad Bulja, Ph.D., FIET, SMIEEE 

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PROFESSIONAL Profile

  • Accomplished career of over 19 years demonstrating consistent success as a Researcher, Leader and Mentor in the Wireless industry research environment.
  • Excellent Scientific contributions in the field of RF, EMC and telecommunications with 4 Nature Journal publications and over 70 peer-reviewed articles and conference papers
  • Strong leadership skills demonstrated by leading Ph.D. level educated cross-continental and cross-departmental teams to successful project execution.  
  • Proven Strategic Business Impact – introduced own developed technology into Nokia’s future technology roadmap (RF filters) and business transfer of the smart surface technology. 
  • Creative, internationally awarded and well-driven inventor with over 70 filed patents in the area of hardware for Radio Frequency (RF), Wireless Sensor Networks (WSN), Internet of Things (IoT) and wireless systems architectures. E.g. Nokia patent award entitled: “A top inventor in implementation patent first filings”, 2020.
  • Significant contribution in the identification of high revenue IP assets and leadership on the creation of Nokia’s patent portfolio roadmap. 
 

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