Dr. Senad Bulja, PhD, FIET, SMIEEE

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Home » Researches » Combined low frequency and third harmonic injection in amplifier linearization

Combined low frequency and third harmonic injection in amplifier linearization

Dr. Senad Bulja 09/01/2023Download Here

The development of modern telecommunications systems imposes stringent criteria on the linearity of RF amplifiers. Linearity of an amplifier is usually specified by the level of Inter-Modulation (IM), normally by the third and sometimes by the fifth order intermodulation. The issue of amplifier linearization is solved in a number of ways, namely, feedback, feedforward, and predistortion. Harmonic injection is a subclass of the predistortion method and relies on the injection of signals at harmonic frequencies in order to linearize an amplifier. 

 

This paper addresses the issue of multi-order harmonic injection where the injected signals are a combination of low and triple frequency signals. Mathematical analysis of this new power amplifier linearization technique is presented in order to establish the potential of the proposed technique. The analysis shows that the injection of the difference frequency signal reduces IM3, though it influences IM5. However, any deterioration of IM5 improves significantly as a result of the injection of the triple frequency signals without disturbing the advantage gained by the difference frequency injection on the levels of IM3. For the validation of the theoretical results, an experimental amplifier system operating at 880 MHz was built. The two-tone measurement confirmed the theoretical predictions.

Fig. 1 (left) Multi-order injection technique using third harmonic and difference frequencies and (right) Experimental board of the proposed multi-order injection technique whose block diagram shown on the left
Fig. 1 (left) Multi-order injection technique using third harmonic and difference frequencies and (right) Experimental board of the proposed multi-order injection technique whose block diagram shown on the left

 

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Profile & Bio

Senad Bulja, Ph.D., FIET, SMIEEE 

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PROFESSIONAL Profile

  • Accomplished career of over 19 years demonstrating consistent success as a Researcher, Leader and Mentor in the Wireless industry research environment.
  • Excellent Scientific contributions in the field of RF, EMC and telecommunications with 4 Nature Journal publications and over 70 peer-reviewed articles and conference papers
  • Strong leadership skills demonstrated by leading Ph.D. level educated cross-continental and cross-departmental teams to successful project execution.  
  • Proven Strategic Business Impact – introduced own developed technology into Nokia’s future technology roadmap (RF filters) and business transfer of the smart surface technology. 
  • Creative, internationally awarded and well-driven inventor with over 70 filed patents in the area of hardware for Radio Frequency (RF), Wireless Sensor Networks (WSN), Internet of Things (IoT) and wireless systems architectures. E.g. Nokia patent award entitled: “A top inventor in implementation patent first filings”, 2020.
  • Significant contribution in the identification of high revenue IP assets and leadership on the creation of Nokia’s patent portfolio roadmap. 
 

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