Abstract:  The basic idea of the invention is to combine Electro-Active (EA) polymer – in particular the ability of voltage controlled mechanical tuning – in combination with Electro-Chromic (EC) material – in particular the ability for voltage controlled dielectric tuning – in order to achieve enhanced overall tunability and flexibility of RF devices, circuits and analogue frontends. The idea can be applied to components and circuits which allow for mechanical and electrical tuning like antennas with e.g., parasitic patches, microstrip-based filters, etc. One exemplary possibility of combining the two materials for improved RF tuneability is described in Figure 1, using the example of an antenna configuration based on an active antenna patch and a passive parasitic patch.

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Abstract: The main idea of the invention is to use known electrochromic material (EC), which allows for changing of dielectric constant, in order to realize variable phase shifters. This is achieved by a simple line structure which is manufactured on EC material. In order to allow for an isolated line biasing and thus adaptation of the dielectric constant, resulting in a variable phase shift, the line segment is RF-de-coupled by capacitors on input and output sides. The supply voltage is applied by a DC-feed, e.g. realized by a simple inductor. The extent of the tuneable phase shift as well as the insertion loss can be controlled and optimized by the application of a specific line length and line width adaptation. Figure 1 depicts an example phase shifter enabled by the use of EC materials.

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Abstract:  The basic idea of the invention is to combine Electro-Active (EA) polymer – in particular the ability of voltage controlled mechanical tuning – in combination with Electro-Chromic (EC) material – in particular the ability for voltage controlled dielectric tuning – in order to achieve enhanced overall tunability and flexibility of RF devices, circuits and analogue frontends. The idea can be applied to components and circuits which allow for mechanical and electrical tuning like antennas with e.g., parasitic patches, microstrip-based filters, etc. One exemplary possibility of combining the two materials for improved RF tuneability is described in Figure 1, using the example of an antenna configuration based on an active antenna patch and a passive parasitic patch.

a): moveable parasitic patch on EA material-based stands;

b): moveable active patch on EA based material

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Abstract:  The basic idea of the invention lies with the realization of RF filters based on RF stub lines, which can be tuned with respect to their RF characteristics by realizing them on bulk- tuneable substrate materials, which allow for the tuning of their dielectric constant properties. By combining several of such dielectrically tuneable RF stubs, e.g., tuneable multiband filters can be designed. Furthermore, as an extension of the idea, concept of buried stubs, embedded between layers with independently controllable dielectric constant, is described, allowing to limit the required tuneable range of the dielectric material. Figure 1 depicts the general concept of the invention.

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In this invention a patch antenna and a reflect-array based on Electro-Chromic (EC) material is disclosed. The basic structure of the reflect-array unit cell is shown in Fig. 1 and the designed reflect-array operating at 300 GHz using the unit cell of Fig. 1 is shown in Fig. 2.

Fig. 1 Topology of the EC- based aperture- coupled reflectarray unit cell (not to scale), (a) front view and (b) side view. The substrate for the patch can be any suitable dielectric such as SiO2 or BCB. The delay line is etched in the isolation layer, however, it is shown as a separate entity. The isolation layer can be any suitable dielectric such as SiO2 , SiN, BCB, to name but a few. 

Fig. 2 prototype of the EC reflectarray, fabrication layout (not to scale). (a) Detailed transparent view of the reflectarray (the ground plane is only shown by the slots), (b) Top view and (c) Side view with the sequence of the layers from top to bottom. Also shown is the isolated silicon wafer. The vias on the wafer sides are used to help identify coordinates which is necessary while soldering and setting up the structure in the measurement jig.

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Abstract:  In this invention a patch antenna and a reflect-array based on Electro-Chromic (EC) material is disclosed. The basic structure of the reflect-array unit cell is shown in Fig. 1 and the designed reflect-array operating at 300 GHz using the unit cell of Fig. 1 is shown in Fig. 2.

The substrate for the patch can be any suitable dielectric such as SiO2 or BCB. The delay line is etched in the isolation layer, however, it is shown as a separate entity. The isolation layer can be any suitable dielectric such as SiO2 , SiN, BCB, to name but a few.

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